| PART |
Description |
Maker |
| GT60N321 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications The 4th Generation
High Power Switching Applications The 4th Generation 高功率转换应用的第四
|
Toshiba, Corp.
|
| 2SB1732 |
Genera purpose amplification(−12V −1.5A)
|
ROHM
|
| BFC12 |
4TH GENERATION MOSFET
|
Seme LAB
|
| BFC47 |
4TH GENERATION MOSFET
|
Seme LAB
|
| BFC45 |
4TH GENERATION MOSFET
|
Seme LAB
|
| BFC50 |
4TH GENERATION MOSFET
|
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
|
| BFC13 |
4TH GENERATION MOSFET
|
TT electronics Semelab Limited
Seme LAB
|
| DPX-S435-15 |
4th Generation Intel? Core?Gaming platform
|
Advantech Co., Ltd.
|
| GOT3157W-881-PCT GOT3157W-881-PCT-NP |
Fanless design with LGA1150 socket 4th generation
|
Axiomtek Co., Ltd.
|
| FMS6146MTC14XNL FMS6146MTC14NL |
Six Channel 4th Order Standard Definition Video Filter Driver
|
Fairchild Semiconductor
|
| PS22053 |
1200V/10A low-loss 4th generation IGBT inverter bridge
|
Mitsubishi Electric Semiconductor
|
